DRAM Design Engineer - TPG

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

Ensure that future technologies meet anticipated power-performance-area and cost goals. Perform inverter ring oscillator simulations for the purpose of model and technology benchmarking. Work with team members from process integration and modeling to ensure cutting edge performance and power on new technologies. Use an inverter ring oscillator as a tool to help define standard cell architecture and critical design rules for future DRAM nodes. Design test structures addressing technology power-performance metrics, to be placed on new DRAM node test vehicles. Develop and maintain key metrics to be used for benchmarking each new design kit release. Understand DRAM sense amplifier design and provide key improvements, node to node. Leverage automation and programming such as Python & JMP for data analysis and decision making.

Employer will accept a Master’s degree in Electrical Engineering or a related field and 1 year of experience in the job offered or in a related occupation.
 

Position requires:
1. Semiconductor technology including design rules and test structure design
2. CMOS devices fabrication process
3. CMOS device physics
4. Design, layout, and simulation of logic gates and small circuits
5. DRAM sense amplifier
6. Python and Verilog programming

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